Reliability Study Of Photoelectric Detector

InGaAs Photodetector has the advantages of spectral response,high quantum efficiency,fast response,etc.InGaAs device meets the development needs of nextgeneration micro-optical devices.What's more it has been widely used in the field of optoelectronics.The problem of the reliability of the device is also becoming more and more serious.Due to the unstable reliability of the device,the failure of the module after packaging is more and more problematic.The lifetime of InGaAs devices is longer than that of general detectors.So the experimental methods are needed to detect the degradation of the device during long-term use in a short period of time.Therefore,the accelerated aging experiment method is used to study the long-term performance evolution characteristics of InGaAs PIN photodetectors,which play an important role in the fields of optical communication and optical sensing.The main contents of this paper are summarized as follows:1.Introducing the relevant principles of photodetectors,including the device structure and process flow of the detector,from the flow of the detector to the packaging of the device.Based on the above,the existing device structure is adjusted and optimized.The device is divided into two large groups,one is before optimization and the other is after optimization.Each group is set with four diffusion depths to study the general law of Zn diffusion in InGaAs photodetectors.2.Introduce the related principles of accelerated aging experiments.When the device is subjected to different stresses such as temperature,humidity and electrical stress,there will be different failure modes,and the accelerated aging models under different stresses are also different.The accelerated aging model corresponding to the failure mode needs to be selected in the process of research.3.The dark current characteristics of InGaAs photodetectors in high temperature accelerated aging test were monitored and the experimental results were studied.In the test,the four sets of diffusion depth devices were subjected to five different temperature stresses.The experimental activation energy of different diffusion depth devices was obtained by analyzing the device failure time,and the device was fitted to work normally.The service life.4.With the help of the test activation,the acceleration factor of the acceleration model can be further corrected to make it more accurately to reflect the objective law of the lifetime of the InGaAs photodetector.At the same time,the aging model under single stress is extrapolated,and the aging test under multiple stress can also be used for life test and failure analysis.Finally,according to the results of this experiment,an optimal diffusion depth parameter for industrial production is selected,and some necessary guidance will be given for industrial production.