Performance And Low Power Characteristic Optimization Of TaO_x Based Resistive Switching Memory

Non-volatile memory is the main demand for data storage in emerging industries such as big data and block chains.Flash and Hard Disk are the main market currently.However,FLASH is difficult to scaling due to approaching the process limit,and HD is too slow to meet the market demand,so the development demand of new non-volatile memory is increasing.Resistive switching memory has become a strong competitor for next generation memory due to its high integrated density（4F²）,fast write/eraser speed,low power consumption and easy compatibility with CMOS technology.At the same time,due to the gradual rise of the flexible consumer electronics market and the lack of breakthrough progress in battery technology,the low power characteristic of fast pulse-operated memory has been highly valued by academia and industry.However,there are some problems in the application of resistive switching memory,such as poor stability and low power consumption.Therefore,this paper focuses on the stability and low power characteristics of the device by studying the ionic resistive switching memory unit based on TaO_x.Firstly,the resistive layer process of Ta/TaO_x/Pt structure is optimized to obtain a better endurance.Secondly,the top electrode material of Ta/TaO_x/Pt is replaced,and the Hf/TaO_x/Pt device with good uniformity between high and low resistance values is obtained.A model is established to explain the mechanism of improving the uniformity of the device.Then,the Al electrode is replaced in the electrode engineering.The endurance of low-power devices has been centralized optimized,which has been improved from less than 100 times to more than2700 times.Finally,Al intercalation is inserted into the upper interface of Ta/TaO_x/Pt devices,which improves the endurance to more than 10,000 times while maintaining low power consumption.Through a series of experiments,the process and mechanism of ReRAM with performance of low power consumption and high reliability are obtained and studied.The final device current is controlled at 10μA,P_SET and P_RESET are less than 20W,P_READ at 5W,endurance performance reaches 2700 cycles.The device with inter-layer achieves 10⁵ cycles at low power consumption.