Study On Single Event Effect Of Nanoscale FinFET Devices

With the development of semiconductor technology,in order to suppress short-channel effects and reduce leakage current,Fin FET devices with three-dimensional structures have emerged at the historic moment,and have gradually become the mainstream process in the integrated circuit industry.However,with the increase of IC integration,the decrease of the supply voltage,and the decrease of node capacitance,the radiation effect has become a key threat to its reliability.Therefore,the simulation and experimental research on the single event effect of Fin FET devices is urgent.With the Sentaurus TCAD software,this paper focuses on the analysis of the single event transient characteristics of Bulk / SOI Fin FET devices and the charge-sharing effects of adjacent Fin FET devices on the single-particle transient characteristics.In addition,an atmospheric neutron irradiation test on the 7nm Fin FET processor chip on a smartphone is analyzed.This article has obtained the following research results:1.Sentaurus TCAD software was used to build a 14 nm Bulk / SOI Fin FET device structure model.Based on the theory model of heavy ion bombardment,the simulation of single event transient characteristics of two different Fin FET devices with different incident parameters and device parameters was performed.Changing the incident position,incident angle,incident depth,LET value,and the characteristic radius of the ion beam of the heavy ions all have corresponding effects on the single event transients of the two Fin FET devices.The center of the drain area is the sensitive area of the device,and the sensitive area is relatively small compared with the planar device.The lateral comparison of the single event transient characteristics of Fin FET devices in the two processes shows that due to the physical isolation of the buried oxygen layer in the SOI process,the diffusion collection mechanism and the funnel effect are greatly suppressed,so the single event transient pulse current generated in the SOI process is less.2.Sentaurus TCAD software was used to build two 14 nm Bulk Fin FET device structure models,and study the single event transient characteristics based on charge sharing analysis.It was found that changing the distance between two Fin FET,the position,depth,and angle of incidence of heavy ions,due to the charge sharing effect of the same substrate,adjacent Fin FET devices also generate weak single event transient pulses,and the pulse peak of the adjacent Fin FET device appears later than the incident device.The pulse peak of the adjacent device is reduced by 2 orders of magnitude compared to the pulse peak generated by the incident device.3.Atmospheric neutron irradiation test was performed on the 7nm Fin FET processor chip mounted on the smartphone.The analysis of the abnormal situation after atmospheric neutron irradiation proves that the single event effect produced by neutron irradiation will affect the storage function and audio playback function of 7nm Fin FET processor chips and mobile phone systems.