Research On Full-Duplex Visible Light Communication Chip Based On GaN-on-Si

Photonic devices have become the core of the communication revolution with the rapid development of wireless communication technology.GaN materials play a vital role in the field of modern visible light communication due to their excellent photoelectric conversion performance.The LED devices produced by GaN have the advantages of small size,low power consumption,high luminous efficiency,fast response speed and so on.In this paper,a full-duplex visible light communication chip based on GaN-on-Si is designed and prepared,and its performance is further studied.First,the GaN-on-Si chip was prepared by ultraviolet contact photolithography process,RIE-ICP etching process and electron beam evaporation process.The method of stripping the back silicon substrate and thinning the III-nitride film improves the light extraction efficiency.The cantilever beam is formed by etching,and different substrates are transferred by mechanical transfer.Secondly,the morphological characterization and performance analysis of the GaN-on-Si chip revealed that the chip has coexistence of light emission and detection,which can achieve full-duplex communication.Finally,a full-duplex visible light audio system is designed and implemented.The transmitter used by the design consists of pre-emphasis circuit,voltage follower and Bias-T circuit and The receiver used by the design consists of a signal extraction circuit and an amplifier circuit.Setting up multiple sets of comparative experiments with different conditions,and making a detailed analysis of the audio system,which prove that it has good communication performance.The successful implementation of the audio system proves the potential of GaN-on-Si chips for full-duplex communication.