Design Of Radiation-hard High-voltage Gate Driver Circuit

Driver chip is widely used in various fields as an important part of Power IC(Integrated Circuit).When the driver chip works on satellite motor for a long time,the irradiation will cause degradation of circuits'performance and reliability.Therefore,it is of significance for development of aerospace industry to study a radiation-hard driver chip.In this paper,a radiation-hard gate driver chip working on high-voltage is proposed implemented in the 1?m 600V BCD process.This chip can be compatible with input signal which amplitude is between 3.3V~5V,and output 120V voltage.The chip is including a dead-time module to prevent from half-bridge straight through and the protection module to turn off the chip under abnormal working conditions.This paper describes the mechanism of radiation effect at first,and clarifies the effect of total dose on the oxide layer of MOS devices,and then has been adopted and verified the enclosed layout structure by Sentaurus TCAD platform.Then this paper models and simulates the transient current model generated by single event incidence MOS devices.After that,the design process of gate driver circuit is introduced in detail and the sub model is built and simulated by Cadence simulation software.Then different radiation hardened schemes are adopted for different module according to the effect of radiation,including triple module redundancy and combinational logic operation redundancy.After the radiation-hard scheme and the top circuit are verified by simulation,the layout design and post simulation are completed,and problems and detects found in post simulation process are solved.After the chip is taped out,the sample chip is tested for electrical performance.The test results show that all indicators can meet the requirement.Finally,the radiation experiment was carried out,the sample chip after radiation is tested.The test results show that capacitance of retraining the total dose of the chip reaches500krad(Si),and the LET threshold of single event burnout reaches 80 MeV·cm~2/mg.