Research On The Characteristics Of Li-doped ZnO Thin Film Resistive Random Access Memory

With the rapid development of information technology,entering the era of big data,many higher performance memories are needed to meet the storage of data.For the traditional metal oxide semiconductor structure memory,it is difficult to meet people's needs for high storage density,low power consumption,fast read and write speed and long retention time.The resistive random access memory?RRAM?not only has excellent storage performance,but also has a simple preparation process,etc.,which has become a hot research field at home and abroad.Binary metal oxides are considered to be the most promising materials in the field of resistive memory due to their simple composition and compatibility with CMOS processes.In this paper,Li-doped ZnO thin film is selected as the research object to study the effect of resistive layer thickness and Li doping concentration on the characteristics of RRAM.Li-doped ZnO thin films were prepared by magnetron sputtering.The elemental composition of Li-doped ZnO thin films was studied by X-ray photoelectron spectroscopy?XPS?,X-ray diffraction?XRD?and scanning electron microscope?SEM?,Microstructure and surface morphology.On this basis,a Pt/Ag/ZnO:Li/Pt/Ti structured resistive memory was designed and prepared on Si O₂/Si substrate.Using the semiconductor parameter test system to build a resistance variable memory characteristic test system,the characteristics of Li-doped ZnO thin film RRAM are tested.At room temperature,the effects of resistive layer thickness and Li doping concentration on the switching characteristics of the device were studied.The experimental results show that when using 5 wt%Li₂CO₃ doped ZnO target,prepared Li-doped ZnO thin film resistive memory,and the thickness of the resistive layer is about100 nm,it has good resistive switching characteristics,low Set voltage and Reset voltage,and the resistive window exceeds 10⁴.In addition,the RRAM can also exhibit good resistive switching characteristics under pulse voltage,achieving more than 100 I-V cycles.In the high resistance state and the low resistance state,the retention time exceeds10⁴ s,and the durability can reach 10³.This shows that Li-doped ZnO thin film RRAM has good application prospects in the field of data storage,and this research can provide a good experimental basis for its practical application.