Research On The Manufacturing Process And Characteristics Of ZnO Nanostructured Acceleration Sensor Based On MEMS Technology

To improve the application of Zn O materials in acceleration sensors,this paper designs a Zn O nanostructured acceleration sensor based on MEMS technology.Its structure is composed of a silicon-based cantilever,Ti/Pt bottom electrode,Zn O seed layer,Zn O nanostructure and Ag top Electrode composition.Based on the theoretical basis of piezoelectric effect,a certain amount of excitation voltage is used to excite the acceleration sensor beam.The piezoelectric layer composed of Zn O nanostructure and Zn O seed layer will generate an alternating current signal due to beam vibration,Through the upper and lower electrodes to achieve the measurement of the output electrical signal.The COMSOL software was used to build a simulation model.The acceleration sensor was analyzed modally,statically and harmoniously.The inner wire bonding method was used to encapsulate the sensor.Zn O nanostructures were prepared by a combination of magnetron sputtering method and hydrothermal method,and analyzed by energy dispersive X-ray spectrometer?EDS?,scanning electron microscope?SEM?,X-ray diffraction?XRD?and X-ray photoelectron spectroscopy?XPS?and other methods were used to characterize the elemental composition and surface morphology of the Zn O nanostructures.The results showed that the Zn O nanostructures exhibited a hexagonal prism shape under the conditions of a growth time of 9 h,a hydrothermal temperature of 90?,and a hydrothermal solution concentration of 0.03 mol/L.Distribution,the element composition is Zn element and O element,preferential growth along?002?crystal direction,and the valence composition of Zn element is Zn²⁺and Zn⁰,the content of Zn²⁺is much more than Zn⁰.At room temperature,a characteristic test system was used to test the characteristics of the Zn O nanostructured acceleration sensor.The results show that the resonance frequency of the sensor is 960 Hz,the acceleration sensor outputs a sine wave waveform and the piezoelectric layer is nanostructured.The acceleration sensor is significantly higher than the piezoelectric layer with only Zn O seed layer.Under the growth conditions of nanostructures:growth temperature 90?,growth time 9h,hydrothermal solution concentration 0.03mol/L,the acceleration sensor response output voltage V_outhas the largest change trend with the excitation voltage V_DD.The response change trend is 365.63m V/V is significantly higher than the response change trend of the Zn O seed layer acceleration sensor 207.58m V/V.