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Design Of Piezoresistive MEMS Pressure Sensor Dedicated Integrated Circuit

Posted on:2021-03-01Degree:MasterType:Thesis
Country:ChinaCandidate:Y ZhouFull Text:PDF
GTID:2438330602997901Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Pressure sensors made using the piezoresistive effect have a wide range of applications.However,the output signal of the sensor is relatively weak and there is interference.It is especially important to study the application specific integrated circuit of piezoresistive MEMS pressure sensors.Based on the 0.18 μm process,an ASIC for piezoresistive MEMS pressure sensor is designed.The circuit includes a signal processing part and a power supply part.The signal processing part includes an instrumentation amplifier with chopping function.The chopping technology is used to significantly reduce the flicker noise of the amplifier.The analog-to-digital converter is used to convert the amplified analog signal to digital signal for easy processing.The power supply section provides a power supply with high power supply rejection ratio for the entire circuit,while providing bias for the bridge.The circuit is designed and simulated by Cadence virtuoso,the amplifier can provide a maximum gain of 128 times,the ENOB of sigma-delta modulator is 16.6 bit.The power supply can provide a constant voltage bias of 3 V or a constant current bias of up to 1m A to the sensor.
Keywords/Search Tags:Pressure sensor, ASIC, Instrumentation amplifier, ADC
PDF Full Text Request
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