| V6O13 is one of the intermediate phase compounds between the vanadium-oxides VO2 and V2O 5. In bulk, this material undergoes a structural transition at approximately 150K, and a magnetic transition from paramagnetic to antiferromagnetic at 55K. While optical experiments have shown that V6O13 is a metal at room temperature, and that a band gap appears at the structural transition temperature, electrical measurements in single crystals and polycrystalline samples have given contradictory results. In this experiment V6O 13 thin films fabricated by the Pulsed Laser Deposition technique were studied. Resistivity measurements were made on the samples using the four-point-probe technique in the temperature interval from 30 to 280K. It was confirmed that V6O13 thin films undergoes a semiconductor-semiconductor transition near the reported structural transition temperature. It is also shown that the electrical behavior changed around the magnetic transition as well. A phenomenological model is proposed to model the physical behavior of the resistivity throughout the measured temperature range. |
