| Half-Heusler alloys MNiSn and MCoSb (M = Ti, Zr, Hf) and layered boride intermetallics with structure types YCrB4 and Er 3CrB7 were designed, synthesized, and characterized. The thermoelectric properties of these two classes of alloys were measured from room temperature to 1100 K with the intent of indirectly studying their electronic structure properties and gauging not only their suitability but that of related alloys for high temperature thermoelectric power generation.;In the case of the half-Heusler alloys, transition metals were substituted to both the M and Ni/Co sites to study the resultant modifications of the d-orbital-rich portion of the electronic structure near the Fermi energy. This modification and subsequent pinning of the Fermi energy within the gap is discussed herein in terms of first principles electronic structure calculations from the literature. In the half-Heusler alloys, it was found that substitution of transition metals invariably led to a decrease in the thermopower, while the resistivity typically maintained its semiconducting trend. On the other hand, Sn doping in MCoSb type alloys -- a dopant that has been known for some time to be efficient -- was shown to result in high ZT at temperatures in excess of 1000 K. Moreover, the band gaps of the transition metal-doped alloys measured in this work offer insight into the discrepancy between the predicted and measured band gaps in the undoped parent compositions.;In the case of the layered boride alloys, on the other hand, few electronic calculations have been published, thus prompting the generalization of a well-known electron counting rule -- which is typically used to study molecular organometallics, boranes, and metallocenes -- to predict the trends in the densities of states of crystalline solids that possess the requisite deltahedral bonding geometry. In accordance with these generalized electronic counting rules, alloys of the form RMB4 (R = Y, Gd, Ho; M = Cr, Mo, W) were measured to be n-type semiconductors with band gaps ranging from 0.15 eV to 0.25 eV. These alloys exhibited thermoelectric power factors comparable with those of other potential boride thermoelectric materials reported in the literature.;Furthermore, as a result of the procedure developed for precision synthesis of boron-rich intermetallics and the improved understanding of bonding trends, layered borides of several previously overlooked structure-types were synthesized and screened for superconductivity. Consequently, alloys of the MoB4 phase were discovered to be superconducting when doped with Nb or Ti. Electrical resistivity measurements of superconducting transitions between 6 and 8 K in these materials were confirmed via magnetic susceptibility measurements and x-ray diffraction. Structural measurements indicated opposite trends in lattice modification than those reported for the superconducting transition metal diborides. |
