Vapor-liquid-solid growth of silicon and silicon germanium nanowires

Si and Si1-xGex nanowires are promising materials with potential applications in various disciplines of science and technology. Small diameter nanowires can act as model systems to study interesting phenomena such as tunneling that occur in the nanometer regime. Furthermore, technical challenges in fabricating nanoscale size devices from thin films have resulted in interest and research on nanowires. In this perspective, vertical integrated nanowire field effect transistors (VINFETs) fabricated from Si nanowires are promising devices that offer better control on device properties and push the transistor architecture into the third dimension potentially enabling ultra-high transistor density circuits. Transistors fabricated from Si/Si 1-xGex nanowires have also been proposed that can have high carrier mobility. In addition, the Si and Si1-xGe x nanowires have potential to be used in various applications such as sensing, thermoelectrics and solar cells. Despite having considerable potential, the understanding of the vapor-liquid-solid (VLS) mechanism utilized to fabricate these wires is still rudimentary. Hence, the objective of this thesis is to understand the effects of nanoscale size and the role of catalyst that mediates the wire growth on the growth rate of Si and Si1-xGe x nanowires and interfacial abruptness in Si/Si1-xGe x axial heterostructure nanowires.;Initially, the growth and structural properties of Si nanowires with tight diameter distribution grown from 10, 20 and 50 nm Au particles dispersed on a polymer-modified substrate was studied. A nanoparticle application process was developed to disperse Au particles on the substrate surface with negligible agglomeration and sufficient density. The growth temperature and SiH4 partial pressure were varied to optimize the growth conditions amenable to VLS growth with smooth wire morphology and negligible Si thin film deposition on wire sidewalls. The Si nanowire growth rate was studied as a function of growth time, temperature, SiH4 partial pressure and wire diameter and discussed in the context of the literature. The wire growth rate was found to increase with wire diameter in agreement with a size-related effect known as the Gibbs-Thomson effect. Subsequently, the effect of P and Sb doping on the growth rate and structural properties of Si nanowires was investigated. A reduction in wire growth rate was observed upon doping, which was pronounced in case of Sb doping, ascribable to P/Sb segregation at the vapor-liquid interface (catalyst surface) and the liquid-solid interface (growth front) that in turn reduces Si incorporation at these interfaces.;The second part of thesis was focused on the Si1-xGe x alloy nanowires. The effect of wire diameter and growth conditions on the interfacial abruptness of Si/Si1-xGex heterostructure nanowires was examined. Abrupt interfaces were obtained at smaller wire diameters. However, the growth temperature wasn't found to have much impact on the interfacial abruptness. These results were explained in terms of catalyst effects on the interfacial abruptness. The remaining part of the study was focused on the effect of growth conditions on the growth rate of Si1-x Gex nanowires. It was found that the Si incorporation mechanism was different between Si and Si1-xGex nanowire growth which was ascribed to changes in the gas phase or catalyst composition that can impact the SiH4 decomposition kinetics at the catalyst surface (vapor-liquid interface) and/or Si incorporation at the growth front (liquid-solid interface).