Semi-analytical model for carbon nanotube and graphene nanoribbon transistors | Posted on:2011-11-14 | Degree:M.S | Type:Thesis | University:Rice University | Candidate:Yang, Xuebei | Full Text:PDF | GTID:2441390002960021 | Subject:Engineering | Abstract/Summary: | | Carbon nanotubes and graphene provide high carrier mobility for ballistic transport, high carrier velocity for fast switching, and excellent mechanical and thermal conductivity. As a result, they are widely considered as next generation candidate materials for nanoelectronics. In this thesis, I first propose a physics-based semi-analytical model for Schottky-barrier (SB) carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model reduces the computational complexity in the two critical but time-consuming steps, namely the calculation of the tunneling probability and the self-consistent evaluation of the surface potential in the transistor channel. Since SB-type CNT and GNR transistors exhibit ambipolar conduction that is not preferable in digital applications, I further propose a semi- analytical model for the double-gate transistor structure that is able to control the ambipolar conduction in-field. Future directions, including the modeling of new CNT and GNR devices and novel circuits based on the in-field controllability of ambipolar conduction, will also be described. | Keywords/Search Tags: | Graphene, Ambipolar conduction, Model, CNT, GNR | | Related items |
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