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Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits

Posted on:2007-07-16Degree:M.SType:Thesis
University:Southern Illinois University at CarbondaleCandidate:Zhang, YuFull Text:PDF
GTID:2441390005471761Subject:Physics
Abstract/Summary:
The aim of this thesis is to investigate the optical chemical and structural properties of ultra-thin TaN and TaSiN diffusion barriers. All different sets of thin film coatings were deposited on polished Si(100) wafers via unbalanced reactive magnetron sputtering technique and studied by means of X-ray Diffraction, Rutherford backscattering spectroscopy, Time-of-Flight Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Spectroscopic Ellipsometry.; Real-time spectroscopic ellipsometry (RTSE) will be utilized as a tool to understand the growth process of these materials, and to monitor their thermal stability in real time. RTSE data was simulated using the Drude-Lorentz model to obtain information about the growth mechanism and the conduction electron transport properties for these structures. The films were annealed up to 800°C and the diffusion of copper into silicon was evaluated by monitoring changes in the optical properties of the bilayers.
Keywords/Search Tags:Diffusion
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