| A hybrid organic/inorganic heterojunction has been fabricated using an n-type silicon wafer (, 3 < rho < 6 O · cm) and a p-type polymer, PEDOT:PSS (rho = 1 O · cm). Standard fabrication techniques such as vacuum deposition and spin coating are required for fabrication and have been employed. I-V characteristics have been measured under both dark and illuminated conditions for different thicknesses of PEDOT:PSS as defined by the spin rate at which the polymer has been spin coated. The data has been analyzed and figures of merit such as series resistance, short circuit current, open circuit voltage, fill factor and efficiency have been calculated. The efficiency ranges to values as high as 0.63%, while the fill factor has been observed to be as high as 57%, both of which are improvements on previously reported hybrid heterojunctions built on n-type silicon wafers. |
