| Although the near-surface deformation behaviour of Al-Si alloys is generally thought to depend on the characteristics of the interface between Al (matrix) and Si (second phase), little is known about its specific deformation and debonding mechanisms. In this study, molecular-dynamics (MD) simulations with the modified embedded atom method (MEAM) potential were utilized to investigate the Al-Si interfaces during room-temperature plastic deformation.; MD simulations were carried out on a three-dimensional Al-Si interface model using about 1x104 atoms. The evolution of the subsurface microstructure of Al-Si system was investigated to develop a constitutive stress-strain relationship. A characteristic stick-slip behaviour was observed. Without vacancies, dislocations, and mechanical defects, the interfacial failure occurred over a finite strain increment and the interface failed at 8GPa stress with the strain of 14%. The results demonstrated that MEAM predictions were consistent with the finite element method predictions, at normalized small stress values the correlation is acceptable (%20). |
