| Amorphous and crystalline silicon nanocomposites have been shown to act as effective "sensitizers" for erbium ions. In the present work, a series of erbium-doped (0.2 at.%) SiOx:Er films (x = 1 -- 1:8) were synthesized by physical vapor deposition and subsequently annealed at temperatures ranging from 400°C to 1100°C to induce phase separation and cluster growth. Silicon nanocluster (Si-NC) and Er3+ photoluminescence intensity spectra and dynamics were investigated as a function of SiOx composition, annealing temperature, pump wavelength and power, and specimen temperature in order to determine characteristic cross-sections and to map the efficiency of the energy transfer process between Si-NCs and Er3+ ions. Additionally, two types of optical waveguides based on SiOx:Er materials were fabricated using conventional CMOS compatible microfabrication processes. Waveguide propagation losses as well as signal absorption and enhancement were investigated under pumping conditions to evaluate the use of SiO x:Er materials as amplifying media. |
