| Gold wire bonding remains the most widely used form of interconnect technology in microelectronic device manufacturing. With current trends such as finer pitch and finer wire diameter, a near perfect coupling interface between the bonding wire and the substrate is needed. Even in trace amounts, contamination present on either the wire or the substrate may impact the wire bonding yield. The purpose of this work was to develop surface characterization methodologies that yield specific results on the nature and depth of contamination present on gold bonding wire. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and X-ray Photoelectron Spectroscopy (XPS) provided effective means to characterize the surface contaminants that were present. The geometry and size of the gold wire required the design of new sample holders and sample preparation methods. Based on the results of the characterization, new industry standards for gold bonding wire surface quality were proposed.; Keywords. Surface characterization, Bonding wire, XPS, ToF-SIMS, Gold, Thermosonic wire bonding... |
