Chemical solution deposition of silver tantalate niobate thin films

Chemical solution deposited Agx(TayNb 1-y)Oz thin films on (111)Pt/Ti/SiO2/(001)Si, (001)LaAlO3, (001)SrRuO3/(001)LaAlO3, Ag, Ag/SiO2/(001)Si and Ag/Ti/SiO2/(001)Si substrates are investigated. Deposition of the films involved synthesis of stable chemical solutions, spinning and heat treatments of the spun layers.; Ag(Ta0.5Nb0.5)O3 (ATN) films that were deposited on (111)Pt/Ti/SiO2/(001)Si (Pt/Si) substrates contained a minimum of two phases: a randomly oriented pseudocubic perovskite and a (001) oriented natrotantite phase. The dielectric constants of the two phase ATN films with a max of ∼270 +/- 25 were lower than that observed for ceramics 410 at room temperature and at 100 kHz. Natrotantite films had lower dielectric constants (70 to 135) than those with the perovskite structure.; Ag(Ta0.5Nb0.5)O3 (ATN), AgTaO3 (ATO) and AgNbO3 (ANO) films that were prepared on (001)LaAlO 3 (LAO) and (001)SrRuO3/(001)LaAlO3 (SRO/LAO) substrates had all (001) epitaxial perovskite phases at crystallization temperatures of 500°C and above. With an increase in crystallization temperature from 500°C to 800°C, the dielectric constants of ATN films on SRO/LAO substrates were increased from 260 +/- 25 to 360 +/- 35 at 100 kHz at room temperature and crystallinity of the films were improved. The DC field tunability of ATN film was not hysteretic but small, 4.8% at 100 kHz and 150 kV/cm. While ATO film had a slightly lower dielectric constant of 110 +/- 10 than the bulk ceramic value of 150, the ANO film had high room temperature permitivities of 550 +/- 55 than the bulk ceramic value of 120 at 100 kHz and at room temperature. Although the DC field tunability of ATO film was not hysteretic but limited to 1.6% at 100 kHz and at 230 kV/cm field, the DC field tunability of the ANO film was higher, with a 12.8% at a negative bias of -140 kV/cm and 21.4% at 190 kV/cm.; When Ag(Ta0.5Nb0.5)O3 thin films that were deposited on Ag foils, Ag/SiO2/Si and Ag/Ti/SiO2/Si substrates at temperatures from 550 to 750°C, they did not have any extensive reaction with silver and the orientation of the films was dependent on the substrate used as well as the followed heat treatment steps.