| Nanoscale science and technology involves interdisciplinary research at the interface of chemistry, physics, biology, and engineering sciences. By developing and following a unique intellectual path---the bottom-up paradigm of nanoscale science and technology---it is possible to assemble integrated nanoscale systems with novel functionalities beyond the conventional lithography limit. In this thesis, I present research efforts focused on fundamental aspects of this bottom-up paradigm using semiconductor nanowires (NWs) and nanowire heterostructures as nanoscale building blocks.; We first present studies conducted on one of the most important semiconductor materials, silicon nanowires (SiNWs). SiNWs are rationally synthesized via a metal cluster-catalyzed vapor-liquid-solid (VLS) growth mechanism. Room temperature electrical transport studies carried out on SiNW field effect transistors (FETs) show exceptional device performance; estimated hole mobilities in p-SiNWs are significantly higher than bulk silicon at similar doping levels. Furthermore, low temperature transport studies on molecular scale SiNWs reveal phase coherent single charge transport through discrete single particle quantum levels with length scales up to several hundred nanometers. Finally, we show that SiNWs can be assembled into functional nanoelectronic devices.; We then discuss two types of nanowire heterostructures: modulation doped silicon nanowires, and branched and hyper-branched nanowire structures. All key properties of modulation doped nanowires can be controlled during the synthesis, including the number, size and periodicity of the differentially doped regions. Their potential applications are also discussed. Moreover, branched and hyper-branched nanowire structures are synthesized via a multi-step nanocluster-catalyzed VLS approach, with branch density controlled by the nanocluster catalyst concentration.; Lastly, we describe the realization of complementary doping in gallium nitride nanowires. In particular, p-type GaN NWs were synthesized via metal-catalyzed chemical vapor deposition method, using magnesium as p-type dopant. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n diodes. In forward bias, the p-n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. |
