| This thesis characterizes the quality and electrical properties of silicon oxynitride (SiOxNy) compared with SiO2. Four different thicknesses of SiO2 films were prepared by a standard current thermal dry oxidation process, and three different thicknesses of SiOxNy films were prepared with N2O gas. The thickness, capacitance, and leakage current of the films were measured. The SiO2 films were grown for 5, 10, 20, 35 minutes at 1000°C, and the thicknesses of SiO2 films were from 161 to 432 A. The SiOxNy films were grown for 45, 120, 300 minutes at 1000°C, and the thicknesses were from 96 to 210 A. For both films, the thickness variations increased as the thickness decreased. The capacitances of SiOxNy films were less than those of SiO2 films. It contradicts the capacitance equation. The leakage current was reduced by using SiOxNy instead of SiO2. |
