| Graphene-based devices are typically fabricated by exfoliation on substrates such as SiO2/Si. This is a disordered surface which can degrade the intrinsic properties of graphene such as mobility. Hence, in order to optimize device performance, we investigated the possibility to deposit graphene on more ordered surfaces such as GaAs, despite the difficulty in locating exfoliated graphene on such substrates. We show that the optical contrast of graphene can be greatly enhanced by increasing the incident angle of the light on the substrates (SiO2 and GaAs). In the second part, we move beyond the standard exfoliated graphene production to present a method for large-scale graphene synthesis by chemical vapour deposition (CVD). We varied various growth conditions to understand and optimize the mechanisms of graphene synthesis and the subsequent transfer techniques. |
