| Efficient solar cells use different semiconductors with different band gap materials to capture as much solar energy as possible. An in-depth study was conducted to explore the role of wide band-gap Al impurity and narrow band-gap Bi impurity to p-type InGaP solar cell structures.;Deep level transient spectroscopy (DLTS) has been used to detect traps and determine the cause of hindrance for attaining the optimum efficiency in p-type InGaP, AlInGaP, Bi doped InGaP and Bi doped AlInGaP. The four types of solar cell structures under investigation showed four electron traps and two hole traps. Detailed depth profile analysis showed that the hole traps generated in the Bi doped InGaP and Bi doped AlInGaP, were found deeper in the junction and acts as strong recombination centers. In view of this study, it has been concluded that the deep levels induced by Al impurity and Bi impurity plays an important role in hindering the efficiency of InGaP solar cell. |
