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Transient thermo-mechanical investigation of a silicon carbide-based solid-state power controller

Posted on:2012-07-23Degree:M.SType:Thesis
University:State University of New York at BinghamtonCandidate:Baltis, Theodore BasilFull Text:PDF
GTID:2458390011454167Subject:Engineering
Abstract/Summary:
Development of solid-state power controller technology to date has been applied only piecemeal, focusing on either the capabilities of the semiconductors or on determining the best materials for use in packaging. This research provides first documentation on the thermal and mechanical behavior of a complete module in response to operating conditions. The module presented operates at a current rating of 96ADC nominal and 960ADC maximum fault, and operates to a junction temperature of 350°C. These capabilities are achieved through the use of silicon carbide-based semiconductors and an aluminum-based packaging to provide efficient thermal management. Finite element analysis is utilized to demonstrate a sustaining time of 3ms and a heat dissipation capability of 80%. Simulations also demonstrate the stress-state of the module under operating conditions, as well as when subjected to very low ambient temperatures. The module is found to be limited to a temperature of -38°C.
Keywords/Search Tags:Module
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