| Diamond-like carbon (DLC) films were deposited on quartz and silicon wafers via an ECR-RF CVD process. These films were created from feed methane, toluene, and tetrakis-dimethylamino titanium (TDMAT) feed sources. The toluene and TDMAT were fed to the reactor by a novel bubbler assembly.; Experiments were conducted to determine the relationships between the deposition parameters and the characteristics of the resulting DLC films using all three precursors. These films were analyzed for atomic composition, carbon bonding, and deposition rate. It was found that increasing bias reduced the deposition rate of the DLC deposited with methane on silicon and quartz substrates. The sp3/sp2 bonded carbon ratio peaked at 300 V bias and decreased above and below that level.; The structure of DLC films created from toluene varied greatly with the dilution of the feed with hydrogen. Although the deposition rate of the DLC remained relatively constant as the bias varied, the sp3/sp 2 bonded carbon ratio reached a peak at 300 V. Upon the addition of hydrogen to the process, the deposition rate, sp3/sp 2 bonded carbon ratio, and stability of the films increased significantly.; Titanium doped DLC films were successfully created using a MOCVD precursor. These films increased in deposition rate with greater application of RF bias. With the addition of methane to the deposition, the films peaked in deposition rate and stability at 20 sccm of methane dilution. Additionally, the dilution with methane increased the sp3/sp2 ratio of the films. |
