Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride

Posted on:1997-05-18

Degree:Ph.D

Type:Thesis

University:University of Illinois at Urbana-Champaign

Candidate:Martin, Gregory Allen

Full Text:PDF

GTID:2461390014480880

Subject:Engineering

Abstract/Summary:

In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS);Forward-backward growth asymmetries are found for InN...

Keywords/Search Tags:

Heterojunctions, Wurtzite

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