Vapor sensors using porous silicon-based optical interferometers

The ability to detect or monitor various gases is important for many applications. Smaller, more portable, lower power, and less expensive gas sensors are needed. Porous silicon (PS) has attracted attention for use in such devices due to its unique optical and electronic properties and its large surface area. This thesis describes the preparation and characteristics of vapor sensors using thin PS Fabry-Pérot films. The average refractive index of the PS layer increases when the PS film is exposed to analyte vapors, causing the optical fringes to shift to longer wavelengths.; Two methods for monitoring the shifts in these optical fringes are explored in this thesis. The first technique measures the reflection spectrum using a white light source, and the second measures the intensity of reflected light using a low-power red diode laser source. The latter method offers a simple, low-cost and reliable transduction mechanism for vapor sensing. A vapor sensor with a detection limit of 250 ppb and a wide dynamic range (five orders of magnitude) is demonstrated. The effect of the PS film thickness and porosity on sensitivity are systematically studied. A model based on the Bruggeman approximation and capillary condensation is proposed to explain this sensing behavior. Two approaches to improve the sensitivity of the PS sensors are explored. In the first, porous Si is chemically modified and the investigation shows that the sensing response varies with different surface properties. In a second study, thin polymer layers are coated on the porous Si substrate to selectively filter solvent vapors. This bi-layer approach is also applied to porous Si layers that have luminescent quantum structures. These latter structures sense adsorbates based on quenching of luminescence from the quantum-confined silicon nanostructures.; In the course of this thesis, an anomalous response of ozone-oxidized PS films to water vapor was discovered. The effect was studied by optical interferometry, isotope studies, and in-situ Fourier transform infrared spectroscopy. It is concluded that in some porous Si films, water forms a strongly hydrogen bonded network that results in compression of the porous Si layer.