| Although temperature is one of the most important variables in semiconductor manufacturing processes, its non-invasive measurement is often difficult, expensive and unreliable. This is especially true in Rapid Thermal Processing (RTP) and Rapid Thermal Annealing (RTA). This thesis describes a bulk micromachined uncooled 1024 element infrared detector and camera system designed for the low cost and reliable measurement of process/wafer temperature uniformity in RTP.; This high accuracy and high dynamic range detector was fabricated by combining a p-well CMOS process with silicon micromachining technology. The detector is organized as a 32 x 32-element array with a pixel size of 375{dollar}mu{dollar}m by 375{dollar}mu{dollar}m and an active area of 300{dollar}mu{dollar}m by 300{dollar}mu{dollar}m. The array uses n/p polysilicon thermopiles as transducers and has a responsivity of 15V/W, a D* of {dollar}1.6times 10times 10sp7{dollar}cmHz{dollar}sp{lcub}-1/2{rcub}{dollar}/W, and a time constant of 1.6 milliseconds. A polysilicon heating resistor is integrated in each of the detectors to allow the individual detectors to be self tested either following fabrication or in the field. The imager also includes on chip CMOS circuitry for address generation, multiplexing, ambient temperature sensing and signal amplification. The overall chip size is 16mm by 16mm, and it operates without vacuum packaging or temperature stabilization.; The infrared imager forms the front end of a microprocessor controlled infrared camera system. The camera system is designed to resolve small temperature nonuniformities over very hot wafers (e.g. 1000{dollar}spcirc{dollar}C {dollar}pm{dollar} 1.5{dollar}spcirc{dollar}C). The camera circuitry provides automatic ranging and gain control using an embedded microcontroller and internal A/D conversion. The camera has a resolution of 1{dollar}spcirc{dollar}C and includes automatic amplifier offset and drift compensation. |
