Growth, characterization, and deposition of luminescent nanoparticles

The purpose of this study was to investigate the synthesis, characterization, and thin film deposition of luminescent Si, SiC and Eu-doped {dollar}rm Ysb2Osb3{dollar} nanoparticles. In particular, the research was directed towards the application of these nanoparticles in low operating voltage, flat panel displays. The nanoparticles were grown by microwave plasma synthesis using vapor phase precursors. Particles were characterized structurally and chemically using transmission electron microscopy, (TEM), high resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Braunauer-Emmett-Teller (BET) isotherm analysis, and elastic recoil detection (ERD). Both the mean particle size and the standard deviation was shown to increase with total system pressure and reactant partial pressure. All of the particles were crystallographically of the cubic phase with single crystal interiors surrounded by amorphous coatings attributed to surface oxidation and/or contamination when exposed to the atmosphere. Doping of the {dollar}rm Ysb2Osb3{dollar} with Eu was performed in situ. Composite films of particles dispersed in an amorphous matrix film were grown on nonconductive substrates in the plasma region and selectively deposited films were deposited downstream of the plasma on biased patterned conductive pads. The morphology of the films was studied using TEM, HRTEM, and field emission scanning electron microscopy (FESEM). Photoluminescence testing revealed that all three types of particles possessed at least one radiative transition in the visible spectrum. The Eu-doped {dollar}rm Ysb2Osb3{dollar} particles were shown to exhibit the strongest luminescence.