Control of bulk and interface properties in the fabrication of hydrogenated amorphous silicon films and structures by plasma CVD |
Posted on:1993-10-20 | Degree:Ph.D | Type:Thesis |
University:The Pennsylvania State University | Candidate:Nag, Somnath S | Full Text:PDF |
GTID:2471390014996818 | Subject:Engineering |
Abstract/Summary: | |
The investigation in this thesis adopts an experimental approach towards the engineering of each layer in hydrogenated amorphous silicon (a-Si:H) structures. Material issues related to fabrication and processing have been addressed in order to control the properties of both intrinsic and doped a-Si:H. A multi-chamber plasma CVD system was developed for this purpose which has been used to fabricate materials under different deposition conditions. This establishes a correlation between materials processing and the properties of a-Si:H thin films. In particular, the deposition temperature is used to change the hydrogen content over a wide range and film properties are correlated with the monohydride and dihydride contents of the material and also with other temperature-dependent parameters. Characterization of the sensitivity of the optoelectronic properties of each layer to the deposition conditions is done with the intention of engineering the characteristics of a-Si:H devices. The effects of bulk material and interfaces at the contacts are also studied using Schottky barrier structures. Controlled changes are created at the metal/intrinsic and intrinsic/doped interfaces which are characterized using current-voltage response and spectral response of photogenerated carrier-collection. The transport simulation program AMPS is used to extract the material parameters and to gain insight into these interface phenomena. As a result, the importance of "in-situ" device fabrication is established. |
Keywords/Search Tags: | Fabrication, Structures, A-si |
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