LARGE-SIGNAL CHARACTERIZATION OF DUAL-GATE FIELD EFFECT TRANSISTORS USING LOAD-PULL MEASUREMENTS

Posted on:1988-10-06

Degree:M.S

Type:Thesis

University:The University of Texas at Arlington

Candidate:DRURY, DENIS MARION

Full Text:PDF

GTID:2478390017957232

Subject:Electrical engineering

Abstract/Summary:

his document describes research investigating the characterization of dual-gate field effect transistors (FETs) using load-pull measurements. The load-pull measurement is a large-signal characterization technique which determines parameter performance of a device under test as drain load impedances are varied. The device characterized is an 1800...

Keywords/Search Tags:

Characterization, Load-pull

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