Study On Magnetic And Electrical Characteristics Of CoFeTaB/Gd Multilayer Films

In recent years,it has been found that antiferromagnetic materials possess the characteristics of terahertz ultra-fast frequency and electronic-controlled magnetic field,which is expected to be one of the favorable candidates for the next generation of ultra-high density and ultra-fast information storage materials.The detection and regulation of magnetization of antiferromagnetic materials have always been a difficult problem due to their characteristics of very small stray fields.Therefore,an artificial antiferromagnetic structure composed of ferromagnetic multilayer films has attracted much attention,especially the artificial antiferromagnetic material based on the antiferromagnetic coupling of rare earth(RE)and transition metal(TM)interface.CoFeTaB/Gd multilayer films were prepared by magnetron sputtering and vacuum annealed at different temperatures.The effects of annealing temperature on the magnetoelectric properties of CoFeTaB/Gd multilayer films were studied by means of structural characterization,magnetic measurement,electrical measurement and relevant theoretical analysis.The details are as follows:1.CoFeTaB/Gd multilayer films were prepared by magnetron sputtering and vacuum annealing2.The structure and composition of CoFeTaB/Gd multilayer film were analyzed by Xray diffraction,atomic force microscopy and transmission electron microscopy3.The magnetic properties,ferromagnetic resonance properties and electrical properties of samples were investigated by using the comprehensive physical property test platformThrough this series of studies,the purpose is to explore the magnetic coupling law between layers in CoFeTaB/Gd multilayer films,and to provide a theoretical basis for the regulation and application of this series of multilayer films.We found that different annealing temperatures significantly affected the structural characteristics of CoFeTaB/Gd multilayer films,and annealing promoted the interfacial diffusion of elements and the crystallization of Gd layer.The prepared multilayer films have obvious stratification characteristics,obvious interface,and the composition remains unchanged after annealing treatment.At the same time,it also affects its magnetic properties.One of the reasons that affects the macroscopic magnetism is that the annealing changes the roughness of the interface.Moreover,the annealing temperature has a certain effect on the interface antiferromagnetic coupling between RE and TM.Through further analysis of ferromagnetic resonance and magnetic transport characteristics,it is proved that annealing can change the interface region of anti-ferromagnetic coupling between transition metal layer and rare earth layer.These explorations provide reference for the preparation of high quality artificial antiferromagnetic materials and provide more material choices for the research and development of spintronics devices.