The Study On Memristor And Magnetoresistance Effects Of Nonmagnetic Semiconductor SnSe₂ And Si

Magnetoresistive and memristive effects are widely used in sensors,memory chips and other electronic products.The non-magnetic materials Si and SnSe₂ have rich electrical transport properties and great research potential in the field of electronic information.They are ideal materials for obtaining excellent magnetoresistance and memristor properties.Therefore,this paper mainly explores the magnetoresistive effect and memristive effect of silicon-based devices and SnSe₂.The research contents and results are as follows:(1)the high-purity SnSe₂ bulk material was successfully prepared by melting method combined with discharge plasma sintering technology,the current-voltage characteristic curves under different temperature and magnetic field conditions were measured,and the memristive and magnetoresistance effects were systematically studied.It is shown that the memristive characteristics at different temperatures can be attributed to the space charge limiting current effect under defect control.As the temperature decreases to 10 K,the memristive phenomenon weakens because the large number of defects for accepting the injected carriers are reduced due to the decrease of impurity ionization at low temperatures.At the same time,the sample exhibits a large negative magnetoresistance of about-37%@0.6 T at 10 K.When impurity scattering predominates,electrons will be subjected to multiple scattering by the impurities,resulting in localization of carriers.The negative magnetoresistance effect is related to the inhibition of the carrier localization by the magnetic field.With the increase of the temperature,the scattering mechanisms gradually change from impurity scattering to lattice scattering,and the negative magnetoresistance effect gradually changes to the positive magnetoresistance effect.(2)We studied the V-I curve of the silicon device containing pn junction at different temperatures and magnetic fields,and systematically studied the electrical process and magnetoresistance effect of the device.From 300K to 100K,the V-I curve of the device can be divided into three stages:linear,nonlinear and breakdown stage.In the linear stage,when the voltage is less than the forward conductive voltage of pn junction,the carrier is driven by the voltage in the n-type Si layer,the lower p-type Si layer does not participate in the conduction process,and the V-I curve is linear.In the nonlinear phase,when the voltage is greater than the forward conductive voltage of pn junction,the n-type Si layer internal carriers are injected into the p-type Si layer through the junction,and the V-I curve begins to deviate from the linearity.In the breakdown stage,when the voltage is greater than the breakdown voltage under the reverse bias,the junction under the reverse bias of the device is subject to an avalanche breakdown.At this point,the voltage of V-I curve plummets.After that,n-type and p-type Si conduct in parallel,and the resistance of device decreases.From 50K to 10K,the V-I curve of the device can be divided into five stages.In addition to the above three stages,there are two other stages such as heating and the second breakdown.In the heating stage,the reverse pn junction is in a continuous heating state after the breakdown.In the second breakdown stage,at low temperature,the joule heat heating effect is more likely to cause the local temperature imbalance of the device.Due to the local temperature imbalance of the device,the reverse pn junction is broken again.At this time,the voltage required by V-I curve drops suddenly again and the total resistance of the device drops.We then further observed the electrical transport under different magnetic field,the study shows that the magnetic field strengthen the lattice scattering.At the same time,we have not observed magnetic field cause great influence to the avalanche ionization.For the biomimetic design of integrated circuits,we apply the concept of Murray's law in biological field to the design of integrated circuits.From the similarity of the fluid transport and the electrical transport,we derive the hierarchical network branch structure of circuit which accords with Murray's law.The circuit structure with high stability comforms to the width of parents branch equal to the sum of the width of daughters branchs.Through finite element calculation and experimental verification through COMSOL,we confirm the branching structure obeys to Murray's law has a certain practical value.