Design And Fabrication Of Microdisk Laser

In the field of communication,semiconductor laser has become one of the core devices in optical fiber communication due to its small size,light weight and good reliability.Many excellent semiconductor lasers are widely used in optical communication,lighting,photoelectric sensing and optical storage.In particular,GaN based semiconductor lasers are excellent semiconductor materials for high frequency,high voltage,high temperature and high power applications because GaN has many excellent properties that silicon materials do not have,such as high efficiency,high brightness,high stability and so on.In this paper,Gan microcavity structure is designed on silicon-based Gan materials.Different sizes and shapes of Gan microcavity are obtained by using the micro nano processing platform in the laboratory.The electrical characteristics,luminescence characteristics and communication performance of Gan microcavity were tested by means of electric injection.The volt ampere characteristic curve,voltage capacitance curve,emission spectrum and 3d B bandwidth of Gan microcavity were obtained.It is found that the small size GaN based LED has high luminous efficiency and narrow half maximum width.In addition,the GaN based LED is suspended by wet etching,and the performance of the suspended LED is compared with that of the UN suspended LED.It is found that the luminous efficiency of the suspended LED is higher,the half maximum width is narrowed,the 3d B bandwidth is increased,and the luminous characteristics and communication performance are significantly improved.However,the wet etching method has some damage to the electrode of the LED,As a result,the turn-on voltage of the volt ampere characteristics of the suspended led becomes larger and the electrical characteristics slightly decrease.At the same time,the suspended GaN based laser was fabricated,and the electroluminescence peak with linewidth less than 2 nm appeared in the electroluminescence spectrum.Finally,In P based LED devices and photodetectors were designed and fabricated.The optical and electrical tests of In P based LED devices were carried out,and the electroluminescence spectrum and volt ampere characteristic curve were obtained.The peak center,output power and half maximum width of the device were extracted from the electroluminescence spectrum,and the photoelectric detection performance of the detector was tested,The test results show that the detector can work well.The research in this paper has important reference value and significance for the design and fabrication of electrically pumped GaN based lasers and GaN based photodetectors with strong optical properties and good communication performance.