| Monolithic same layer optoelectronic integrationis the solution of high performance computer and 5G high speed communication and low power optoelectronic integrated circuit in the future.Under the challenge of the physical and technological limits of current microelectronic technology,it is urgent to study the new materials and new methods for monolithic same layer optoelectronic integration,with good compatibility with Si technologyand the ability to increase the driving current without reducing the size of the transistor.In view of this,this paper focuses on the DR-Ge1-xSnx,which belongs to the IV semiconductor and is compatible with Si process.Compared with the indirect band gap Ge,DR-Ge1-xSnxcarrier effective mass decreases,and the light-emitting efficiency and carrier radiative recombination efficiency were significantly enhanced when applicatiedin optical devices,thus has become a research hot spot in the field.It is important to note that the material carrier mobility can also improve by the modification technology,so it can also be used in electronicsdevices.As a result,DR-Ge1-xSnxhas the potential application value of monolithic same layer optoelectronic integration,which provides a new way for the development of high-speed devices and circuits,but has not yet made a mature Ge-based monolithic same layer optoelectronic integration.MOS device is an important part of DR-Ge1-xSnxmonolithic same layer optoelectronic integration,which is very important for realizing high-speed/high-performance DR-Ge1-xSnxmonolithic same layer optoelectronic integration.In view of this,this paper focuses on the simulation of DR-Ge1-xSnxMOS and other related devices,mainly including the following work:1.The energy band and carrier mobility of DR-Ge1-xSnxalloy:Based on the k·p perturbation theory,this paper studies the E-k relationship of DR-Ge1-xSnxenergy bandfirstly,calculates the effective mass of holes and electrons in each crystal group according to the energy band structure model,then establishes the quantitative analytical model of DR-Ge1-xSnxcarrier mobility,and verifies the results by PL spectrum and Monte Carlo simulation.2.The energy band and carrier mobility of DR-Ge1-xSnxMOS inversion layer:Aiming at the problem of imperfect simulation parameters of DR-Ge1-xSnxMOS devices,based on the 8-band k·p model,this paper adopts the envelope function method based on the triangle potential well approximation,discusses the quantization effect of DR-Ge1-xSnxmos inversion layer,studies the key problems of effective mass changes of the first subband of inversion layer,and establishes the energy band structure model.On this basis,the carrier mobility model of DR-Ge1-xSnxmos inversion layer is established.3.TCAD simulation of DR-Ge1-xSnxMOS device:Aiming at the research and design of DR-Ge1-xSnxrelated devices,this project will study the relationship between the geometry,material physical parameters and device performance of DR-Ge1-xSnxdevices.Based on the theory of device simulation and optimization,the parameter design scheme of monolithic same layer optoelectronic integration PMOS device with performance optimization is proposed.The structure of DR-Ge1-xSnxMOS device is optimized by TCAD simulation,and the relationship between the device geometry,material physical parameters and device performance is revealed.In conclusion,this paper has completed the establishment of DR-Ge1-xSnxmaterial and MOS inversion layer energy band structuremodel and mobility model,and has carried out TCAD simulation and design of related devices,which has laid a good material foundation for the subsequent preparation of photoelectric devices.In addition,the optimized DR-Ge1-xSnxMOS device will provide a strong theoretical basis for the subsequent device preparation.The purpose of this research is to provide an important theoretical basis for the understanding of DR-Ge1-xSnxphysics and the design of DR-Ge1-xSnxrelated devices in the monolithic same layer optoelectronic integration application. |
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