Research On Vertical PhOFETs Based On Graphene And Different Forms Of Aluminum Of Source

In the past few decades,people have conducted in-depth research on silicon-based field effect transistors and applied them to many electronic technology products such as mobile computers.With the rapid development of science and technological,the inorganic field effect transistors can no longer meet the needs of many fields.At this time,the organic field effect transistors are used in many scenarios due to its unique advantages of low cost,compatibility with flexible substrates,and large-scale production.Due to the limitation of the channel length,the working current cannot reach a high level,which limits its application in many scenarios.In order to obtain larger working current devices,in this paper,an organic layer is used as a carrier transport layer,and a vacuum thermal evaporation method is used to prepare a vertical structure organic field effect transistors—Vertical Photosensitive Organic Field Effect Transistor(Vertical PhOFETs).The carriers of PhOFETs are injected from the source,and its current is closely related to the sourc.This paper has a research on the effects of different source shapes and different materials on device performance,including the following aspects:(1)On a Si substrate with 1000nm Si O₂,a complete aluminum film is used as the source,vertical PhOFETs with the structure of Si/Si O₂/Al(10nm)/Cu Pc(50nm)/Au(30nm)were prepared,then we tested and analyzed it.(2)Using strip metal aluminum as the source and adding a carrier blocking layer,the structure of vertical PhOFETs were prepared as Si/Si O₂/Al(50nm)/Li F(10nm)/Cu Pc(50nm)/Au(30nm).(3)Using square-porous metal aluminum as the source electrode,vertical PhOFETs with the structure of Si/Si O₂/Al(50nm)/Li F(10nm)/Cu Pc(50nm)/Au(30nm)were prepared.(4)Using single-atom layer graphene film as the source,vertical PhOFETs with the structure of Si/Si O₂/Graphene/C60(50nm)/Cu Pc(50nm)/Au(30nm)were prepared.It is found that the device current of the complete aluminum electrode as the source is large,but the regulation effect of the gate voltage is weak,after the source is replaced with a strip aluminum electrode and the buffer layer is added,the device current decreases,but the regulation effect of the gate voltage is significantly enhanced.For the device,the use of square hole-shaped aluminum as the source device's gate control ability and current have been improved.The use of monoatomic layer graphene as the source device increases the current by three orders of magnitude,and its responsivity also reaches a higher level.The research results of this paper have a certain reference value for improving the operating current of the organic field effect transistor and optimizing the performance of the device.