Investigation On The Effect Of Zn On The Composite Layer Of Copper-clad Aluminum Composites

The use of copper-clad aluminum composite to make wires can not only guarantee the electrical conductivity,but also save a lot of scarce copper metal,which has attracted much attention.With the rapid development of preparation technology,the application field is expanding,but the composite layer of copper-clad aluminum composites is easy to crack during forming and use.The fundamental reason is that Cu₉Al₄ and other intermetallic compounds in the composite layer are distributed longitudinally along the composite layer in film form.This problem has not been solved so far.In order to solve the problem of brittleness of Cu-Al cladding composite layer,this paper uses Zn to restrain the formation of Cu-Al intermetallic compound.The effect of Zn on the composite layer is mainly studied.It is found that adding zinc between copper and aluminium can block the diffusion of copper and aluminium atoms and effectively prevent the formation of Cu-Al intermetallic compounds.However,if not controlled properly,CuZn₅ and Cu₅Zn₈ are easily formed at the Cu-Zninterface.The Cu-Zn alloy is formed by zincizing at the surface of copper to reduce the concentration of copper at the interface of copper and zinc,which can prevent the formation of copper and zinc compounds at that position.The heat treatment process is the key factor to control the formation of Cu-Zn compounds.Excessive temperature leads to the formation of Cu-Zn compounds.Although the temperature is too low,Cu-Zn compounds will not be formed,but the composite effect of Cu-Zn is poor.Under the experimental conditions,the thickness of?phase in(Cu-Zn)/Zn composite layer is basically consistent withthe diffusion distance of copper.The relational expression between the thickness of?phase in(Cu-Al)/Zn composite layer and the thermal recombination process parameters,and the relational express between the concentration of Al at different positions in the Zn/Al composite layer and the thermal recombination process parameters are obtained in the temperature range of260-300?.