| Because of both of the characteristics of perovskite(high light absorption,synthesis at relatively low temperature,and bandgap changing with halogen anions varying)and quantum dots(size-effect,quantum confinement effect),all-inorganic lead halide perovskite quantum dots have been researched a lot in the field of optoelectronic devices.Nevertheless,the performance of optoelectronic devices based on this kind of material can be further improved by ligand modification and combination with other high-performance semiconductor materials.Besides,with the help of some new features produced by binding quantum dots to other material,new application for perovskite quantum dots will be developed.In this work,three goals have been achieved:1)the research for the function of new ligand material—tetracene—in emitting efficiency enhancement of CsPbI3 quantum dots light emitting devices with surface ligands exchanged reaction;the luminance of the devices was improved from 90 cd m-2 to 403 cd m-2 at the same operation voltage;2)fabrication of phototransistor with high photo responsivity(107 A W-1)and detection for weak light(30 nW)by combining CsPbI3 quantum dots to high-mobility 2D bismuth oxide selenide film,meanwhile,the response speed was not decreased when quantum dots films was coated on the 2D material;3)computer simulated triangular-lattice photo crystal fiber refractive index sensor coated with CsPbBr3 quantum dots/gold bilayer,which decreases the full-width at half maximum of loss spectra compared to that of same kind of sensor with only gold layer(from about 70 nm to about 15 nm,and the lowest value is only 13.74 nm)so that the sensor accuracy can be increased.It is believed that these results can provide reliable research basis for the performance improvement and various application of all-inorganic lead halide perovskite quantum dots,as well as the further development of scientific research for other kinds of perovskite materials. |
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