Quantitative Study On Hydrothermal Synthesis Of Dichalcogenide Alloy Materials And Raman Phonon Spectra

Transition metal dichalcogenide alloy semiconductor materials with unique properties in physics,chemistry,and electronic transport display tremendous application potential and development research value in micro-nanoelectronics and optoelectronics.As one of the typical materials,the alloy semiconductor material of disulfide can change its properties by regulating different elements or different doping concentration,thus expanding the application field and application value of the material.This paper is mainly focused on preparing MoS₂,WS₂,and Mo_1-XW_XS₂alloy semiconductor materials through hydrothermal synthesis method.Characterization analysis on the structure and morphology of the product was performed by using X-ray powder diffractometer(XRD),Raman spectrometer(Raman)and scanning electron microscope(SEM).The main contents of this study are as follows:(1)MoS₂,WS₂and Mo_1-XW_XS₂were prepared with the main raw materials of sodium molybdate,ammonium metatungstate,thiourea,and oxalic acid by using hydro-thermal synthesis under the conditions of a reaction time of 48 hours and a temperature of 220?.(2)A quantitative analysis of XRD,Raman and SEM atlas of MoS₂,WS₂,and Mo_1-XW_XS₂with different constituents was performed,with an acquisition of the interplanar spacing and lattice constants of alloy materials at different concentrations,and Relevant parameters are provided for the study of the physical properties of the alloy materials.(3)The linear function of Raman frequency shift at high temperature is established,and the cohesive energy of the material is obtained,which provides a new theoretical method for the rapid development of distributed fiber Raman temperature measurement method.To sum up,the structural characterization of dichalcogenide alloy semiconductor materials was conducted using hydrothermal synthesis method,the corresponding physical parameters were obtained,and the linear relation between Raman frequency shift and temperature was established,thereby providing a theoretical basis for the application of alloy semiconductor materials in optoelectronic devices.