Research On Optic Property In The Ions-doped All Inorganic Perovskite

All inorganic lead halide perovskite materials have attracted much attention recently due to their high light absorption coefficient,strong defect tolerance and excellent electron transport properties.However,the lack of stability of all-inorganic lead halide perovskite-based optoelectronic devices still limits its application in future devices.Ion doping technology is an important means of semiconductor material modification,and its main strategy is to introduce impurity ions into the materials to realize the regulation of optical,electrical,magnetic and other characteristics.In the past few years,ion doping technology has been widely used to regulate the performance of metal halide perovskite.A variety of metal ions have been successfully introduced into perovskite host,which has played a great role in improving the photoelectric properties of materials and improving the structural stability.on the basis of a large number of research literatures,the controlled preparation of perovskite doped with rare earth elements is realized by one-step chemical vapor deposition method,and the influence of the incorporation of rare earth ions on the optical properties of perovskite host is systematically studied.In this paper,the influence of rare earth ion doped into perovskite host is studied systematically.The main research contents are as follows:1.Several rare earth ion doped perovskites were synthesized by chemical vapor deposition.The structure characterization and density functional theory calculation revealed the rare earth ion is more inclined to replace the lead ion in the perovskite host,and lead to the formation of some vacancy defects.The doping process will lead to the formation of a large number of vacancy defects.In addition,by summarizing some general mechanisms of ion doping,which provides an important basis for subsequent experimental design,material synthesis and optical property modulation.2.We provided a clear microscopic picture of the formation mechanism of selftrapped exciton and clarified the large stokes shift and the source of the emission spectrum from the perspective of physics.Introducing suitable dopants into lattice units to produce specific material defects will create potential fluctuation in the crystal lattice,which could localize excitons.Simultaneously,the formation of self-trapped excitons will induce more intensely lattice deformation to accommodate the self-trapped excitons.And will briefly analyze the current doping existing problems and challenges,and make some prospects for the future.