Study On Preparation Of Tin Sulfide Thin Films With Liquid Phase Controlled And Photoelectric Properties

Since suitable band gap,wide absorption spectrum,high absorption coefficient,good carrier mobility,abundant element reserves,non-toxic and environmentally friendly,tin(?)sulfide(SnS)has attracted more and more attention as an absorber candidate.However,the deposition methods of SnS thin films,such as chemical evaporation deposition,sputtering,atomic layer deposition,etc.,are high cost or involve slow deposition rates.On the other hand,it is difficult to control the morphology of thin films.Moreover,tuning and improving photoelectric properties of semiconductor thin films would be conducted by controlling surface morphology and effective doping.In this thesis,we propose a method that can easily to prepare tin(?)sulfide from the Liquid phase deposition method and control morphology as below:(1)Different reducing agents were used to reduce tin disulfide,so as to control the ratio of sulfur to tin,study and discuss the mechanism of film synthesis,and control the surface morphology of tin disulfide films in this way.(2)The reaction from the reduction of tin(?)sulphide to tin(?)sulfide generally takes place at 300~oC.Based on the study of the mechanism of film synthesis,we propose that different heating processes will form different surface morphology.On this basis,the surface morphology of tin(?)sulfide thin film and its photoelectric properties was controlled by different heating processes.(3)An important advantage of the liquid-phase deposition method for preparing semiconductors is that it is convenient to regulate the properties of semiconductor materials by doping various elements in different proportions.This advantage is verified by adding sodium and cesium in the precursor for doping experiments.