Properties Of Perovskite Solar Cell Based On Electronic Transport Layer Of SZTO

Solar energy is a kind of clean energy with unlimited reserves,which can be used to meet the growing energy demand.Converting solar energy into electric energy is the most effective strategy for solar energy utilization.In recent years,perovskite solar cells with low cost and high efficiency are developing rapidly,and the photoelectric conversion efficiency has increased rapidly from 3.8%to 25.2%.There are many kinds of perovskite solar cell devices,but they mainly include four parts:electron transport layer,perovskite active layer,hole transport layer and electrode,among which transparent metal oxide materials such as Sn O₂ and Zn O are used as electron transport layer.In view of the potential commercialization of perovskite solar cells,it is very important to upgrade its functional layer.In this experiment,the amorphous metal oxide films Si-ZnSnO doped with different Si concentration were prepared by RF magnetron sputtering,and the surface morphology,electrical properties and optical properties of the films were characterized.The results show that proper Si doping can reduce the oxygen vacancy in the film and form a more compact and flat film.In this experiment,we also spin coated calcium titanium layer and hole transport layer on Si-ZnSnO thin film,and used vacuum evaporation to grow a layer of surface metal electrode,and prepared a complete perovskite solar cell device.The experimental results show that with the increase of Si concentration,the absorption performance of perovskite film based on Si-ZnSnO electron transport layer in the visible light range is significantly improved,the recombination rate is significantly reduced,and the ability of electron extraction and transfer is significantly enhanced.The perovskite solar cell based on Si-ZnSnO as the electron transport layer has the highest photoelectric conversion efficiency of 13.4%,open circuit voltage of 1.04V and short circuit current of 21.6m A/cm².Filling factor 0.67.Si-ZnSnO thin film has important research value as electron transport layer of perovskite solar cell.