Preparation And Study Of PZT Thin Film On Piezoelectric Stress Optical Switch

optical switch is the main device to realize circuit on-off.at present,the optical switch made by thermal-optical effect consumes about 200-500 mw of power and provides 0.5-1 k Hz modulation speed.however,for a large number of devices that need optical switch control,such as microwave photons,it is urgent to reduce the power consumption of single optical switch to nw level.for devices that need fast control of optical path,thermal light switch also limits its performance development.To solve this problem,researchers propose to deposit a layer of piezoelectric material on the optical switch waveguide structure to realize the active stress control of the waveguide structure.The piezoelectric material with large transverse piezoelectric coefficient and widely used piezoelectric PZT film in MEMS k Hz,finally realize the modulation speed of 1-5 and the power consumption is only 20 uw..The However,the piezoelectric PZT film deposited by magnetron sputtering has poor compatibility with the waveguide layer,which leads to the decrease of the film performance and the difficulty of providing sufficient stress drive for the optical switch.This paper designs a piezoelectric PZT film driving layer with large aspect ratio based on MZI commonly used optical switches.The inverse piezoelectric characteristics and the size of the upper electrode of the piezoelectric PZT film are used to control the driving stress range of the film.The effective control of optical switch waveguide layer and the change of internal effective refractive index are realized.The effect of the upper electrode width and the thickness of the piezoelectric PZT film on the effective refractive index of the waveguide layer is investigated by using the Comsol simulation.The effective refractive index of the waveguide layer is optimal when the PZT thickness increases when the other conditions remain unchanged.On the basis of the structure design of piezoelectric PZT film driving layer,the process of preparing large surface backlog PZT film on optical switch waveguide layer by sol-gel method is studied.Subsequently,according to the technological requirements of the simulation for the size of the upper electrode,a double layer photoresist stripping process was used instead of the corrosion process to prepare the upper electrode with a length of 8000 ?m,and a width of only 5 um on the piezoelectric PZT film.Finally,the morphology,structure and electrical properties of piezoelectric PZT films were characterized,The results show that the thickness of piezoelectric PZT film is about 1.2um,.The The surface is flat,5 nm,maximum roughness Growth mainly along 110 crystal direction,The optimal orientation is 75.47%;Can work at least 30 V voltage,Leakage current is about 1×10-7 A;A longitudinal piezoelectric strain constant of p C/N;21.4 Ferroelectric loop pattern uniform,Better saturation,uc/cm2.intensity of residual polarization At a frequency of 10000 Hz,Introduction...