Research On Fabrication And Formation Mechanism Of Diamond Nano Array Based On Metal Mask

Based on the excellent physical and chemical properties of diamond materials,new materials prepared into nanowire array structures have been widely used in the fields of microelectronics,electronic field emission equipment,chemistry and biosensors.However,the current metal mask etching method for preparing diamond nanoarrays lacks relevant experimental demonstrations on the factors affecting the size of the mask spheres,such as the lack of research on the surface quality of sputtered metal masks under different test parameters,and different metal masks The contrast between.This article uses chemical vapor deposition to prepare diamond films,and discusses the effect of changing deposition test parameters on film quality,uses physical vapor deposition(PVD)to coat metal masks,and discusses the effects of different sputtering test parameters on metal masks.The size of the metal mask spheres formed during the annealing process of the metal thin film is analyzed and verified.Finally,the diamond nanowire array structure is prepared by the plasma etching method.And using first-principles calculation methods to simulate and analyze the formation mechanism of metal masks,which is of great significance for understanding the formation mechanism of metal nanomasks.During the experimental preparation process,a microwave plasma chemical vapor deposition equipment(MPCVD)was used to prepare diamond films.By optimizing different experimental deposition parameters,the best deposition parameters for this experiment were finally obtained: air pressure 4000 Pa,CH4 flow 247.5sccm,H2 flow2.5sccm and power 1200 W.The physical vapor deposition(PVD)method is used to sputter nickel film,aluminum film,and titanium film,and the best sputtering power,temperature,and sputtering rate of the mask are obtained through the SEM inspection and comparison analysis of the samples.Given the existing optimal annealing temperature of 700? and annealing time of 5-10 minutes,the nickel mask prepared under such preparation test parameters can be uniformly distributed on the surface of the substrate,with a particle diameter of ?45nm.The diamond film with the mask is etched by the oxygen ion body,and then the diamond nanowire array is prepared.The etching experiment parameters are: the power of the upper plate is 800 W,the lower plate is 300 W,and the etching time is 10 min.The average height of the prepared diamond wire is 1.5um;This paper uses the method of first-principles simulation to study the properties of the diamond/metal interface.First,the adsorption and migration stability of metal atoms on the surface of H-Ter diamond(111)is analyzed,and it is verified that metal atoms on the surface of H-Ter diamond are prone to transition under perturbation and cannot be stably adsorbed on the surface.Based on the optimized supercell model,four types of diamond/metal interface structures are constructed,and the stability of the diamond/metal interface is analyzed.The calculated result is that the adhesion strength of the interface structure is Ni>Ag>Cu>Al.But the adhesion work of the interface is around 0,so the stability of the interface is easily destroyed when the external environment changes.For example,at high temperature,the surface tension of the molten Al liquid can exceed the adhesion work of the interface with a small amount of surface tension.,And form a non-wetting interface.Theoretical analysis is carried out through molecular dynamics simulation calculation,and the results and experiments are mutually verified.