Research Of Perovskite Photovoltaic Devices Based On Amphiphilic Polymer Interface Modification

Perovskite photovoltaic devices have the advantages of high energy conversion efficiency,simple preparation process,low production cost,and flexibility,etc.,which make them a research hotspot in the current photovoltaic field.In the past decade,breakthroughs have been made in the research of perovskite photovoltaic devices.At present,highest certification efficiency of perovskite photovoltaic devices has exceeded25%,which has achieved the efficiency requirements of commercial photovoltaic devices.However,the hysteresis and poor stability of perovskite photovoltaic devices limit their further applications.Researches have shown that modification and regulation of the interface in the perovskite photovoltaic device can reduce interface defects,increase carrier mobility,inhibit carrier recombination,and thereby improve the energy conversion efficiency and stability of the device.Based on this,to solve the above traditional problems of perovskite photovoltaic devices,this paper explores the interfacial modification and preparation process for inverse perovskite solar cell devices,and investigates the effects of amphiphilic polymers PFN and PFN-Br as interfacial modification materials on the performance of perovskite photovoltaic devices.1.The effect of PFN modified electron transport layer on the performance of perovskite photovoltaic devicesIntroduce PFN into PC₆₁BM as a mixed heterojunction layer applied to ITO/TAPC/CH₃NH₃Pb I₃/PC₆₁BM/Bphen/Ag structure device,the experimental analysis demonstrated that the short-circuit current,open-circuit voltage and filling factor of the device are remarkably increased after the modification of the electron transport layer with PFN.This is mainly attributed to the introduction of PFN which has improved the charge transport ability of the electron transport layer and inhibited the recombination of carriers.At the same time,the composite electron transport layer has a better film morphology,which effectively suppresses leakage current and improves the environmental stability of the device.The efficiency of the optimized photovoltaic device is increased by 21.6%,and the efficiency attenuation at room temperature is reduced by about 15%.2.The effect of PFN and PFN-Br active layer interface modification on the performance of perovskite photovoltaic devicesThe PFN and PFN-Br molecules are introduced to the surface of the perovskite film through anti-solvent doping.The PFN and PFN-Br molecules are filled in the perovskite grain boundary and the film surface to play a defect passivation effect,and their rigidity is common.The yoke plane can promote the transfer of charges on the grain boundary.In addition,the modified interface exhibits stronger hydrophobicity,protecting the perovskite film from water erosion.The optimized device efficiency of PFN and PFN-Br increased from 15.07%to 17.32%and 17.10%,respectively.After 200 hours at room temperature,the device efficiency increased from 70%of the initial efficiency to 80%.In summary,interface optimization of the perovskite active layer and electron transport layer with amphiphilic polymers can effectively improve the efficiency and stability of the perovskite photovoltaic device.This work provides new ideas for promoting the commercialization of perovskite photovoltaic devices.