Font Size: a A A

Preparation And Electrical Property Study Of Zinc Oxide Based Thin Films

Posted on:2022-01-29Degree:MasterType:Thesis
Country:ChinaCandidate:Y C ZhaoFull Text:PDF
GTID:2481306539468284Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Due to the advent of the information age,information storage technology has been widely concerned by the academic circles.Traditional memory devices have certain limitations,which requires us to improve the stability and capacity of memory by researching new materials and developing new technologies.As the third generation semiconductor,ZnO material has many advantages,such as low cost,wide band gap,low synthesis temperature,controllable electrical behavior,good chemical stability,good biocompatibility and so on.This paper is about preparation and electrical property study on ZnO based films by the magnetron sputtering method and sol-gel one.(1)Ca doped ZnO thin films(CZO)were prepared on FTO substrate by magnetron sputtering method,and annealed at 300?,500?,600?,700?,respectively.The electrical properties of Au/CZO/FTO devices and the resistance properties at different annealing temperatures were studied.The resistance characteristics of Au/CZO/FTO devices annealed at 600? are better than that of Au/CZO/FTO devices by comparison of current and voltage measurements.When the scanning voltage is-0.5V,the HRS/LRS ratio can reach two orders of magnitude,and the scanning can be repeated 100 times stably.The trap controlled SCLC conduction and the modulation of the Au/CZO Schottky barrier are both responsible for the resistance switching behavior.In addition,we fabricated Au/CZO/P-Si devices on P-Si substrates and studied their electrical properties under different intensities of ultraviolet light.(2)ZnO and Al2O3 films were deposited on FTO substrate by magnetron sputtering method.According to the order of film formation,there were two types of films.The first Z1 film was coated with a layer of Al2O3 and then a layer of ZnO,and the second type of film,marked by Z2,was coated with a layer of ZnO and then a layer of Al2O3.In this chapter,the resistance characteristics of Z1 and Z2 structures were studied.By comparing the data of the two samples,it is found that Z1 device has one-way resistance characteristic,while Z2 has bidirectional resistance characteristic.After 100 cycles testing,neither of the two structures showed significant fatigue effect,and the switching ratio could reach two orders of magnitude.The HRS/LRS ratio of Z1 device was more stable than that of Z2device.(3)Mg doped ZnO thin films(MZO)on FTO substrate were prepared by sol-gel method.Subsequently,the films were annealed at 400?,500?,600? and 700? in air atmosphere,respectively,and their electrical properties were measured.The sample annealed at 400? is prone to breakdown when the applied voltage exceeds 1V,so the sample annealed at 500?,600? and 700? at more than 1V were tested to get the most stable scanning voltage.The diode-like unidirectional conductivity of the samples annealed at500?,600? and 700? was found when the scanning voltage was low,and the switching ratio of the samples annealed at 500? and 600? gradually decreased with the increase of the number of applied voltage scanning,while the switching ratio of the samples annealed at700? was relatively stable.
Keywords/Search Tags:Resistance effect, Magnetron sputtering, Zinc oxide
PDF Full Text Request
Related items