Research On Improving The Optical And Electrical Properties Of Dielectric/Metal/Dielectric Multilayer Film By Using Nanoparticle Copper Film

The preparation process of dielectric/metal/dielectric multilayer film(DMD)is very simple and will not cause pollution.At the same time,it has excellent light transmission performance and conductive performance,and can be applied to the field of flexible electronic devices.It is of great significance to further improve the light transmittance and conductive properties of DMD multilayer films.The main purpose of this topic is to explore how to use nanoparticle copper film to improve the photoelectric performance of DMD multilayer film.We have done the following work to achieve this goal.First of all,we have to study the characteristics of nano-Cu particle film;we explored the plasmon resonance effect and oxidation law of nano-Cu particle film,and prepared nano-copper particle film by vacuum evaporation coating method,and under nitrogen and oxygen atmosphere The nano-copper particle film was annealed at high temperature,and then by UV-visible absorption spectroscopy,XPS,SEM and Laman spectrometer.The surface morphology,composition ratio and Raman enhancement effect of the sample were analyzed.The structure and composition of the sample and the influence of the annealing process were analyzed,and the plasmon resonance characteristics of the nano-copper particle film were explored.The study found that nitrogen annealing can cause CuNPs to produce a more obvious absorption peak(600nm-700nm).The peak is determined by SEM,XPS and Laman spectrometer to confirm that the peak is the plasmon resonance peak of Cu.When the plasmon resonance peak of Cu is located When the wavelength is the same as that of the Raman laser,it shows a strong surface-enhanced Raman scattering phenomenon.The plasmon resonance peak is caused by the change of the surface morphology.During the nitrogen annealing process,a CuNPs@Cu2O core-shell structure with a higher Cu content will be produced.This structure has strong plasmon characteristics.The Cu film produces a strong absorption peak and has a strong Raman enhancement effect.However,too high temperature and too long nitrogen annealing will weaken the plasmon resonance peak and gradually disappear due to oxidation.At the same time,under low temperature and low oxygen environment,the oxidation product of Cu tends to Cu2O;under high temperature and high oxygen environment,the oxidation product of Cu tends to CuO.Based on the research of nano-Cu particle film,the TAT three-layer film is optimized by using the Cu pre-deposited layer and the method of increasing the deposition rate of the Ag film.The prepared 30 nm TiO₂|0.1nm/s-0.5nm Cu|0.2nm/s-7.8nm Ag|30nm TiO₂ has superior photoelectric performance,The average transmittance from 370 to 800 nm reached 92%,the sheet resistance was as low as 6.3?/sq,and within six months,the photoelectric performance of the sample did not deteriorate significantly.The results show that the use of nano-copper as the pre-deposition layer can significantly improve the conductivity and light transmittance of the TAT transparent conductive film,and increase the application potential of TAT in the field of optoelectronic displays.The surface structure of the sample was analyzed by SEM.The Cu pre-deposition layer and increasing the deposition rate of the Ag film can improve the surface quality of the Ag film and greatly improve the surface continuity of the Ag film;thereby improving the photoelectric performance of the TCAT multilayer film.This study is of great significance for understanding the heating oxidation process of nano-Cu particles and the plasmon resonance characteristics,and it also promotes the application of DMD multilayer films in the field of optoelectronics.