The Deposition Of Antimony Sulfide Films By Close-space Sublimation Method And Its Application On Solar Cells

Solar energy is an ideal clean energy,which also has the advantage of being inexhaustible and inexhaustible.The development of new and efficient solar cells is an important way to solve the environmental pollution problems and energy crisis.Due to the advantages of suitable band gap,high absorption coefficient,good stability,and abundant reserves,antimony sulfide（Sb₂S₃）is considered as an ideal material for the preparation of the new generation of high-efficiency thin-film solar cells.More importantly,Sb₂S₃ is an ideal material that can be matched with silicon batteries to prepare tandem solar cells.However,the current performance of Sb₂S₃ thin-film solar cells needs to be improved.In this work,the researches are carried out on the preparation and performance improvement of two forms of Sb₂S₃ thin film solar cells with supstrate structure and substrate structure.（1）The research on the deposition of Sb₂S₃ film based on the Close-Space Sublimation method（CSS）in the top lining structure and the performance of the solar cell.The CSS method was developed to prepare Sb₂S₃films,and the influence of substrate temperature,evaporation temperature,evaporation time and other factors on the deposition of Sb₂S₃ film and device performance was systematically studied,and the deposition process of high-quality antimony sulfide film was obtained.Finally,the photoelectric conversion efficiency of the fabricated device was finally up to 4.98%.Furthermore,by characterizing the device’s capacitance-voltage,capacitance-frequency,driver stage profile capacitance,variable temperature current-voltage and other characteristics,the performance loss mechanism of the prepared high-performance devices was systematically studied.The results show that interface recombination is the main recombination mechanism.（2）The research on orientation control and performance optimization of Sb₂S₃ thin film solar cells with substrate structure.The crystal selection of low-dimensional materials has a significant impact on its electrical properties.When Mois used as the substrate of the Sb₂S₃ thin-film solar cells,the molecular chain of Sb₂S₃ grows parallel to the substrate,and the carriers are transported among the ribbon by hopping style,and the mobility is low.In this paper,the introduction of the MoSe₂ interface layer induces the preferential growth of the Sb₂S₃ polycrystalline film in the[hk1]orientation to a certain extent,and significantly improves the carrier transport characteristics of the film.At the same time,the back contact barrier is reduced,and the minority carrier recombination on the back surface is inhibited.Furthermore,the effect of deposition distance on the deposition of Sb₂S₃ thin film and the performance of related devices in the Sb₂S₃ thin film solar cells with the substrate structure was further studied.Through systematic research work of band structure optimization,Sb₂S₃film orientation adjustment and crystallinity optimization,the photoelectric conversion efficiency of the device has increased by 38%.