Research On Fabrication And Performance Of Thin Film Transistors With Different Device Structures Based On Printing Methods

With the rapid development of new display panel technology towards ultra-large area and ultra-high definition,the development of low-cost,high-performance thin-film transistor printing preparation technology has become the key.Compared with traditional semiconductor manufacturing processes,printing technology has the advantages of flexibility,simplicity,saving raw materials,low cost and environmental friendliness,making it an important potential method for manufacturing thin film transistors.In this paper,thin film transistors with different structures are prepared by printing technology,and their performance is optimized to obtain high-performance thin film transistors.The specific research contents are as follows:(1)The ITZO/IGZO double active layer structure thin film transistor is prepared by printing technology,which has an active back layer In Ga Zn O(IGZO)and an active front layer In Sn Zn O(ITZO),and by changing the annealing temperature,Film thickness and ink concentration optimize the performance of TFT devices,and successfully fabricated DAL TFTs with ITZO/IGZO dual active layers.ITZO/IGZO DAL TFT devices have a switching ratio of 10⁷,and have high mobility and excellent bias stability.(2)Successfully fabricated thin film transistors with different channel numbers by printing equipment,using IGZO solution for the active layer film,adjusting the solution preparation method,and improving the condensation and expansion of the patterned film during the printing process.The active layer prepared by printing has good film morphology and low roughness on the surface of the substrate.Although increasing the number of channels can increase the on-state current of the TFT,at the same time the off-state current is also improved,so the device switching ratio is similar,indicating that the device performance is basically not affected by the number of channels.(3)Inkjet printing has the advantage of material patterning.This feature is used to print concentric ring electrodes on Si/Si O₂substrates.On this basis,it is studied to change the channel width of the circular electrode,the thickness of the semiconductor layer,and the post-anneal temperature.The impact of these aspects on the performance of TFT devices prepared by inkjet printing has successfully produced TFT devices that are more excellent than traditional photolithography processes.This paper proposes a circular electrode ring structure to ensure that the source and drain electrodes have the same channel width in all directions,which effectively reduces the area of a single transistor while increasing the channel area.The data shows that,compared with the traditional dumbbell-shaped thin film transistor,the round electrode structure thin film transistor has a larger conduction current,a smaller leakage current,a stable withstand voltage and driving current,and has the effect of suppressing the change of the characteristics of the thin film transistor.