Study On The Preparation And The Properties Of Inorganic Perovskite CsPbX₃

Perovskite are one of the hot spot in materials science,in currently.And they have good application prospects in the field of piezoelectric,superconductivity,catalysis and ion conductors.Among them,lead-based halogen perovskite materials have attracted much attention in the industry due to their excellent photoelectric properties such as long carrier lifetime,adjustable band gap,and high quantum yield.Nowadays,its synthesis methods have shown a diversified development trend,but how to realize simple,low-cost and large-scale preparation of such materials is still a frontier issue that the current field is committed to exploring.This article will focus on the research of this problem,and the specific work is as follows:1.Innovatively introduce the one-pot method for the simple preparation of CsPbBr₃quantum dots.Compared with the existing heat injection technology,it can realize the material preparation in one step,further simplify the experimental operation process,increase the material preparation capacity,and facilitate the realization of large-scale.This paper mainly studies the effect of the preparation condition parameters on the various properties of CsPbBr₃quantum dot materials,including structure,morphology,optics,lifetime and other properties,we have deeply analyzes the synthesis mechanism of the material about this method.The study finds that the synthesis conditions are(90?,25 min),samples with better performance can be obtained,the quantum efficiency is as high as 57%,and the color purity is86%.2.This paper puts forward simple-solution spraying technology to realize the one-step deposition of CsPbBr₃quantum dot film,study the internal influence mechanism of preparation condition parameters and halogen element substitution on its structure,optics,morphology,lifetime and other properties,and explore the film forming mechanism.This paper successfully realized the preparation of green CsPbBr₃and red CsPbBr _XI_(3-X)films.The green CsPbBr₃film combined with nitride red phosphors can produce white light devices(WLEDs)with CIE color coordinates(0.33,0.34).Change the device working current found that the half-peak width and center wavelength of the WLEDs have little change,indicating that the CsPbBr₃quantum dot film prepared by this technology has excellent stability.and we had combined with the PET substrate,the flexible CsPbBr₃quantum dots film is prepared by low-temperature and normal-pressure solution spraying technology.The preparation system contains DMSO solvent,oleylamine ligand,and ethyl acetate.This technology can realize the simple and flexible preparation of the system materials and promote its applications in flexible electronic devices.The results show that the prepared sample has a cubic structure,the photoluminescence peak is 517 nm,the optical band gap is 2.3 e V,the CIE coordinate value is(0.10,0.67),and the fluorescence quantum efficiency is 8.6%.In addition,a preliminary discussion on the one-step film formation mechanism of the preparation system is also carried out in the article.