Preparation Of Metal Halide Perovskite And Zinc Oxide Materials And Study On Their Optoelectronic Devices

Perovskite have a history of more than one hundred years.Metal halide perovskite has been widely used in solar cells,lasers,light emitting diodes(LED),and other fields due to its excellent photoelectric properties,such as high absorption coefficient,strong photoluminescence,low density of trap states and long carrier diffusion length.Metal halide perovskite is considered as one of the most promising semiconductor materials for optoelectronics in the future.The photoelectric properties of perovskite with different morphologies(micron sheet,micron wire,quantum dot,micron sphere)are also different,so it is very necessary to explore the preparation methods of perovskite with different morphologies.Zinc oxide(ZnO)is direct wide bandgap metal oxide semiconductor.Due to its simple preparation method,good biocompatibility,and rich morphology,outstanding achievements have been achieved in the field of semiconductor.But in terms of practicality,its low quantum efficiency,slow response speed,and short photoresponse area seriously affect its application in optoelectronic devices.And the integration of a single rod is difficult,it is very important to develop zinc oxide structures which are easy to be integrated in order to broaden their optoelectronic applications.This paper explored the preparation methods of CsPbBr₃ and ZnO,and synthesized various kinds of material structures with excellent morphology.Based on the prepared structures,ZnO array/Cspb Br₃ QDs/GaN LED and single-mode lasing of all inorganic perovskite microdisks were constructed.The specific work of this paper is as follows:1.The preparation methods of CsPbBr₃ and ZnO materials with different morphologies were investigated.By adjusting the preparation conditions(the molar ratio of Cs Br toPbBr,the intensity of pressure in the quartz tube during the reaction and the reaction temperature,etc.),the ultrathin CsPbBr₃ micronsheets and hemispherical CsPbBr₃ were prepared by chemical vapor deposition;CsPbBr₃ microdisks were prepared by antisolvent method;CsPbBr₃ quantum dots(QDs)were prepared by hot-injection method;ZnO nanorod arrays was prepared by chemical vapor deposition.It provides a good experimental basis for the next step using perovskite and zinc oxide materials with different morphologies in various optoelectronic devices.2.ZnO nanorod array/CsPbBr₃ QDs/GaN heterojunction LED and pure ZnO nanorod array/GaN LED were constructed.After adding CsPbBr₃ QDs,the luminous performance of the LED is obviously improved,and the luminescence of CsPbBr₃ appears,and the defects luminescence intensity of ZnO is significantly reduced.This work not only provides a new method for the preparation of white light LEDs,but also provides new ideas for the integrated optoelectronic applications of perovskite inorganic semiconductor heterojunctions.3.Furthermore,based on surface plasmon resonance effect,by coupling Pt nanoparticles with CsPbBr3 MDs,the laser threshold was significantly reduced(?16%)and the enhancement rate of stimulated emission about 200%,the quality factor(?3950)was also significantly improved.This work is helpful to realize stable and high-quality single-mode laser and expand the application of perovskite laser.